ba157, ba158, ba159d, ba159 www.vishay.com vishay general semiconductor revision: 24-jul-13 1 document number: 88536 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fast switching plastic rectifier features ? fast switching for high efficiency ? low forward voltage drop ? low leakage current ? high forward surge capability ? solder dip 275 c max. 10 s, per jesd 22-b106 ? material categorization: for definitions of compliance please see www.vishay.com/doc?99912 typical applications for use in fast switching re ctification of power supply, inverters, converters and freewheeling diodes for consumer and telecommunication. note ? these devices are no t aec-q101 qualified. mechanical data case: do-204al, molded epoxy body ? molding compound meets ul 94 v-0 flammabi lity rating ? base p/n-e3 - rohs-co mpliant, commercial grade terminals: matte tin plated leads, solderable per j-std-002 and jesd 22-b102 ? e3 suffix meets jesd 201 class 1a whisker test polarity: color band denotes cathode end primary characteristics i f(av) 1.0 a v rrm 400 v, 600 v, 800 v, 1000 v i fsm 20 a t rr 150 ns, 250 ns, 500 ns i r 5.0 a v f 1.3 v t j max. 125 c package do-204al (do-41) diode variation single die do-204al (do-41) maximum ratings (t a = 25 c unless otherwise noted) parameter symbol ba157 ba158 ba159d ba159 unit maximum repetitive pe ak reverse voltage v rrm 400 600 800 1000 v maximum rms voltage v rms 280 420 560 700 v maximum dc blocking voltage v dc 400 600 800 1000 v maximum average forward rectified current ? 0.375" (9.5 mm) lead length at t a = 55 c i f(av) 1.0 a peak forward surge curr ent 10 ms single half ? sine-wave superimposed on rated load i fsm 20 a maximum operation j unction temperature t j - 65 to + 125 c maximum storage temperature t stg - 65 to + 150 c electrical characteristics (t a = 25 c unless otherwise noted) parameter test conditions symbol ba157 ba158 ba159d ba159 unit maximum instantaneous ? forward voltage 1.0 a v f 1.3 v maximum dc reverse current ? at rated dc blocking voltage t a = 25 c i r 5.0 a maximum reverse recovery time i f = 0.5 a, i r = 1.0 a, i rr = 0.25 a t rr 150 250 500 ns typical junction capa citance 4.0 v, 1 mhz c j 12 pf
ba157, ba158, ba159d, ba159 www.vishay.com vishay general semiconductor revision: 24-jul-13 2 document number: 88536 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 ratings and characteristics curves (t a = 25 c unless otherwise noted) fig. 1 - forward current derating curve fig. 2 - maximum non-repetitive peak forward surge current fig. 3 - typical instantaneous forward characteristics fig. 4 - typical reverse characteristics ordering information (example) preferred p/n unit weight (g) preferred package code base quantity delivery mode ba158-e3/54 0.33 54 5500 13" diam eter paper tape and reel ba158-e3/73 0.33 73 3000 ammo pack packaging ambient temperature (c) average forward current (a) 0 25 50 75 100 125 150 175 0 0.2 0.4 0.6 0.8 1.0 0.375 " (9.5 mm) lead length 60 hz re s i s tive or inductive load peak forward s urge current (a) 1 10 100 0 5 10 15 20 number of cycle s at 60 hz t j = 55 c 8.3 m s s ingle half s ine-wave in s tantaneou s forward voltage (v) in s tantaneou s forward current (a) 0.4 0.6 1.0 1.2 1.4 1.6 2.0 0.01 0.1 1 10 100 0.8 1.8 t j = 25 c pul s e width = 300 s 1 % duty cycle percent of rated peak rever s e voltage (%) 20 60 80 100 0.01 1 10 100 0.1 40 0 in s tantaneou s rever s e current (a) t j = 25 c t j = 100 c
ba157, ba158, ba159d, ba159 www.vishay.com vishay general semiconductor revision: 24-jul-13 3 document number: 88536 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 5 - typical junction capacitance fig. 6 - typical transient thermal impedance package outline dimensions in inches (millimeters) rever s e voltage (v) junction capacitance (pf) 0.1 1 10 100 1 10 100 t j = 25 c f = 1.0 mhz v s ig = 50 mv p-p 0.01 0.1 1 10 100 0.1 1 10 100 t - pul s e duration ( s ) tran s ient thermal impedance (c/w) do-204al (do-41) 0.107 (2.7) 0.080 (2.0) dia. 0.034 (0.86) 0.028 (0.71) dia. 1.0 (25.4) min. 1.0 (25.4) min. 0.205 (5.2) 0.160 (4.1)
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